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| Ordering number:ENN6391 N-Channel Silicon MOSFET FW233 Load Switching Applications Features * Low ON resistance. * 4V drive. Package Dimensions unit:mm 2129 [FW233] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 Conditions 0.1 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Ratings 30 20 8 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (1000mm2x0.8mm) 1unit Mounted on a ceramic board (1000mm2x0.8mm) 52 1.7 2.0 150 -55 to +150 Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=4A, VGS=4V Conditions Ratings min 30 1 10 1.0 9.8 14 16 24 21 34 2.4 typ max Unit V A A V S m m Marking : W233 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60100TS (KOTO) TA-2661 No.6391-1/4 FW233 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A IS=8A, VGS=0 Conditions Ratings min typ 1550 350 220 12 210 110 95 40 5 7 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Electrical Connection D1 D1 D2 D2 Switching Time Test Circuit VDD=15V Vin 10V 0V Vin PW=10s D.C.1% ID=8A RL=1.87W D VOUT G S1 G1 S2 G2 (Top view) P.G 50W FW233 S 15 ID -- VDS V 10.0 16 14 12 10 8 6 4 2 0 ID -- VGS VDS=10V 3.5 V 3.0 V Drain Current, ID - A 6.0 V 12 2.5V 9 6 Drain Current, ID - A 4.0 V Ta= 7 VGS=2.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 --25 C 2.5 3 25C 3.0 IT00722 100 120 140 160 IT00724 Drain-to-Source Voltage, VDS - V 60 IT00721 40 Gate-to-Source Voltage, VGS - V RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) - m RDS(on) -- Ta 35 Static Drain-to-Source On-State Resistance, RDS(on) - m 50 30 25 20 15 10 5 0 --60 40 8A 30 4A I D= =4V , VGS =10V VGS ID=4A A, I D=8 20 10 0 0 2 4 6 8 10 12 14 16 18 20 --40 --20 0 20 40 60 80 Gate-to-Source Voltage, VGS - V IT00723 Ambient Temperature, Ta - C 5C 2.0 No.6391-2/4 FW233 Forward Transfer Admittance, | yfs | - S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 yfs -- ID VDS=10V 5 -- 2 C 100 7 5 3 2 IF -- VSD VGS=0 C 75 Forward Current, IF - A Ta= Ta= 75 C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 25 C 0.01 0.001 2 3 5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7 100 Drain Current, ID - A IT00725 10000 7 5 0.01 7 5 3 2 0.001 0.2 C --25 C 0.5 0.7 25 0.3 0.4 0.6 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD - V 10 9 IT00726 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS - V VGS -- Qg VDS=10V ID=8A 8 7 6 5 4 3 2 1 Ciss, Coss, Crss - pF 3 2 Ciss 1000 7 5 3 2 Coss Crss 100 0 0 5 10 15 20 25 30 IT00727 100 7 5 3 2 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS - V Total Gate Charge, Qg - nC IT00728 1000 7 5 SW Time -- ID VDD=15V VGS=10V Drain Current, ID - A td(off) tf ASO IDP=52A ID=8A <10s 1 1m 00 s s 10 ms 10 0m s Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC op era td(on) tr Operation in this area is limited by RDS(on). tio n 1.0 2 3 5 7 10 2 3 Drain Current, ID - A 2.0 0.01 Mounted on a ceramic board (1000mm x0.8mm) 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Ta=25C Single pulse 1 unit IT00729 Drain-to-Source Voltage, VDS - V 5 7 100 IT00730 PD -- Ta Allowable Power Dissipation, PD - W 1.7 1.5 1.0 1u To ni tal Di ss ip ati on t 0.5 0 0 Mounted on a ceramic board (1000mm2x0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C IT00731 No.6391-3/4 FW233 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.6391-4/4 |
Price & Availability of FW233
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